| PART |
Description |
Maker |
| K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG
Infineon Technologies A...
|
| K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC14 K4J5 |
256Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4J55323QG K4J55323QG-BC12 K4J55323QG-BC14 K4J5532 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| K4S560432D-NC75 K4S560432D-NC7C K4S560432D-NC1H K4 |
256Mbit SDRAM, LVTTL, 133MHz
|
Samsung Electronic
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| HYB25D256160CC-6 HYB25D256400CC-5 HYB25D256400CC-6 |
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR400 (3-3-3); available 2Q04
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) Available 2Q04
DDR SDRAM Components - 256Mb (16Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
|
Infineon
|
| M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| V53C1256162VALS10 V53C1256162VALS10E V53C1256162VA |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280832D-TC_L1H K4S280832D-TC_L1L K4S280832D-TC_ |
RES, 0603, TF, 16.5R, 1%, 1/10W
128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
